? 2003 ixys all rights reserved ixys reserves the right to change limits, conditions and dimensions. phase control thyristor isoplus220 tm electrically isolated back surface a c g g d s isoplus 220 tm isolated back surface* cs 19 v rrm = 800 - 1200 v i t(rms) = 35 a i t(av)m = 13 a advance technical information v rsm v rrm type v dsm v drm vv 800 800 cs 19-08ho1c 1200 1200 cs 19-12ho1c symbol t est conditions maximum ratings i t(rms) t vj = t vjm 35 a i t(av)m t c = 85 c; 180 sine 13 a i tsm t vj = 45 c; t = 10 ms (50 hz), sine 100 a v r = 0 v t = 8.3 ms (60 hz), sine 105 a t vj = t vjm t = 10 ms (50 hz), sine 85 a v r = 0 v t = 8.3 ms (60 hz), sine 90 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 50 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 45 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 36 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 33 a 2 s (di/dt) cr t vj = t vjm repetitive, i t = 20 a 100 a/ s f = 50 hz, t p =200 s v d = 2/3 v drm i g =0.08 a non repetitive, i t = i t(av)m 500 a/ s di g /dt = 0.08 a/ s (dv/dt) cr t vj = t vjm ;v dr = 2/3 v drm 500 v/ s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm t p = 30 s5w i t = i t(av)m t p = 300 s 2.5 w p gav 0.5 w v rgm 10 v t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz rms; i isol 1 ma 2500 v~ t l 1.6mm from case; 10s 260 c f c mounting force 11...65 / 2.4...11 n / lb weight 2g features features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low cathode-to-tab capacitance (15pf typical) z planar passivated chips z epoxy meets ul 94v-0 z high performance glass passivated chip z long-term stability of leakage current and blocking voltage applications z motor control z power converter z ac power controller z light and temperature control z scr for inrush current limiting in power supplies or ac drive advantages z space and weight savings z simple mounting ds98789a(8/03)
cs 19 symbol test conditions characteristic values i r , i d t vj = t vjm ; v r = v rrm ; v d = v drm 1ma v t i t = 30 a; t vj = 25 c 1.65 v v t0 for power-loss calculations only (t vj = 125 c) 0.87 v r t 29 m ? v gt v d = 6 v; t vj = 25 c 1.5 v t vj = -40 c 2.5 v i gt v d = 6 v; t vj = 25 c 25 ma t vj = -40 c 50 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd 3ma i l t vj = 25 c; t p = 10 s 75 ma i g =0.08 a; di g /dt =0.08 a/ s i h t vj = 25 c; v d = 6 v; r gk = ? 50 ma t gd t vj = 25 c; v d = 1/2 v drm 2 s i g = 0.08 a; di g /dt = 0.08 a/ s r thjc dc current 1.7 k/w r thck dc current typical 0.6 k/w a max. acceleration, 50 hz 50 m/s 2 isoplus220 outline
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